P-Channel MOSFET
The complement to the N-channel MOSFET. Turns on when the gate voltage is pulled below the source voltage by the threshold amount. Used for high-side switching where the source connects to the positive supply rail.
Properties
| Property | Description | Default | Range |
|---|---|---|---|
| Vgs_th | Gate–source threshold voltage magnitude (V) — device turns on when Vgs < –Vgs_th | 2.5 V | 0.5 V – 6 V |
| Id_max | Maximum continuous drain current magnitude (A) | 10 A | 0.1 A – 500 A |
| Vds_max | Maximum drain–source voltage magnitude (V) | 60 V | 5 V – 1 200 V |
| Rds_on | On-state drain–source resistance (Ω) | 0.2 Ω | 0.001 Ω – 10 Ω |
Simulation behavior
The device turns on when Vgs <= –Vgs_th (gate pulled sufficiently below source). The drain–source path conducts with resistance Rds_on. Failure occurs when |Id| > Id_max or |Vds| > Vds_max.
P-channel MOSFETs typically have higher Rds_on than equivalent N-channel devices due to lower hole mobility.
Tips
- Place the source terminal at the positive supply rail and drive the gate with a signal referenced to that same rail — or use a gate driver to shift voltage levels.
- To turn the device fully off, drive the gate to the same potential as the source (Vgs = 0).
- For high-side switching from a microcontroller, consider pairing with a small NPN transistor to invert and level-shift the control signal to the gate.